IXYS - IXFK50N85X

KEY Part #: K6395480

IXFK50N85X Pricing (USD) [7328PC Stock]

  • 1 pcs$6.18743
  • 10 pcs$5.62333
  • 100 pcs$4.77983
  • 500 pcs$4.07692

Nimewo Pati:
IXFK50N85X
Manifakti:
IXYS
Detaye deskripsyon:
850V/50A ULTRA JUNCTION X-CLASS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFK50N85X electronic components. IXFK50N85X can be shipped within 24 hours after order. If you have any demands for IXFK50N85X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK50N85X Atribi pwodwi yo

Nimewo Pati : IXFK50N85X
Manifakti : IXYS
Deskripsyon : 850V/50A ULTRA JUNCTION X-CLASS
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 105 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 152nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4480pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 890W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264
Pake / Ka : TO-264-3, TO-264AA