Diodes Incorporated - DMHC4035LSDQ-13

KEY Part #: K6522166

DMHC4035LSDQ-13 Pricing (USD) [167961PC Stock]

  • 1 pcs$0.22021
  • 2,500 pcs$0.19490

Nimewo Pati:
DMHC4035LSDQ-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 31V 40V SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMHC4035LSDQ-13 electronic components. DMHC4035LSDQ-13 can be shipped within 24 hours after order. If you have any demands for DMHC4035LSDQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMHC4035LSDQ-13 Atribi pwodwi yo

Nimewo Pati : DMHC4035LSDQ-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 31V 40V SO-8
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : 2 N and 2 P-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Ta), 3.7A (Ta)
RD sou (Max) @ Id, Vgs : 45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.9nC @ 4.5V, 5.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 574pF @ 20V, 587pF @ 20V
Pouvwa - Max : 1.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO