DMHC4035LSDQ-13 Pricing (USD) [167961PC Stock]
- 1 pcs$0.22021
- 2,500 pcs$0.19490
- Nimewo Pati:
- DMHC4035LSDQ-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 31V 40V SO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tiristors - SCR and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMHC4035LSDQ-13 electronic components. DMHC4035LSDQ-13 can be shipped within 24 hours after order. If you have any demands for DMHC4035LSDQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMHC4035LSDQ-13 Atribi pwodwi yo
Nimewo Pati :
DMHC4035LSDQ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 31V 40V SO-8
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
2 N and 2 P-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta), 3.7A (Ta)
RD sou (Max) @ Id, Vgs :
45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.9nC @ 4.5V, 5.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
574pF @ 20V, 587pF @ 20V
Pouvwa - Max :
1.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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