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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMS86500DC

ON Semiconductor - FDMS86500DC

KEY Part #: K6393577

FDMS86500DC Pricing (USD) [60305PC Stock]

  • 1 pcs$0.64838
  • 3,000 pcs$0.55879
Nimewo Pati:
FDMS86500DC
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N CH 60V 29A 8-PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS86500DC electronic components. FDMS86500DC can be shipped within 24 hours after order. If you have any demands for FDMS86500DC, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS86500DC Atribi pwodwi yo

Nimewo Pati : FDMS86500DC
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N CH 60V 29A 8-PQFN
Seri : Dual Cool™, PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Ta), 108A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
RD sou (Max) @ Id, Vgs : 2.3 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 107nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7680pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta), 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Dual Cool™56
Pake / Ka : 8-PowerTDFN

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