[12967PC Stock]
- Nimewo Pati:
- IXFR12N100
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 10A ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFR12N100 electronic components. IXFR12N100 can be shipped within 24 hours after order. If you have any demands for IXFR12N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR12N100 Atribi pwodwi yo
Nimewo Pati :
IXFR12N100
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 10A ISOPLUS247
Seri :
HiPerFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
1.1 Ohm @ 6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS247™
Pake / Ka :
ISOPLUS247™
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