[1584PC Stock]
- Nimewo Pati:
- NP80N04KHE-E1-AY
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 40V 80A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America NP80N04KHE-E1-AY electronic components. NP80N04KHE-E1-AY can be shipped within 24 hours after order. If you have any demands for NP80N04KHE-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP80N04KHE-E1-AY Atribi pwodwi yo
Nimewo Pati :
NP80N04KHE-E1-AY
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 40V 80A TO-263
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 120W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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