Renesas Electronics America - HAT2175H-EL-E

KEY Part #: K6408936

[455PC Stock]


    Nimewo Pati:
    HAT2175H-EL-E
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    MOSFET N-CH 100V 15A 5LFPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America HAT2175H-EL-E electronic components. HAT2175H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2175H-EL-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HAT2175H-EL-E Atribi pwodwi yo

    Nimewo Pati : HAT2175H-EL-E
    Manifakti : Renesas Electronics America
    Deskripsyon : MOSFET N-CH 100V 15A 5LFPAK
    Seri : -
    Estati Pati : Active
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
    RD sou (Max) @ Id, Vgs : 42 mOhm @ 7.5A, 10V
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1445pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 15W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : LFPAK
    Pake / Ka : SC-100, SOT-669