Toshiba Semiconductor and Storage - SSM3J334R,LF

KEY Part #: K6416955

SSM3J334R,LF Pricing (USD) [1169017PC Stock]

  • 1 pcs$0.03498
  • 3,000 pcs$0.03480

Nimewo Pati:
SSM3J334R,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P CH 30V 4A SOT-23F.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM3J334R,LF electronic components. SSM3J334R,LF can be shipped within 24 hours after order. If you have any demands for SSM3J334R,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J334R,LF Atribi pwodwi yo

Nimewo Pati : SSM3J334R,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P CH 30V 4A SOT-23F
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 71 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 2V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 5.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 280pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23F
Pake / Ka : SOT-23-3 Flat Leads

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