FDC6392S Pricing (USD) [397472PC Stock]
- 1 pcs$0.09352
- 3,000 pcs$0.09306
- Nimewo Pati:
- FDC6392S
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.2A SSOT-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Tiristors - SCR, Tiristors - DIACs, SIDACs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDC6392S electronic components. FDC6392S can be shipped within 24 hours after order. If you have any demands for FDC6392S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDC6392S Atribi pwodwi yo
Nimewo Pati :
FDC6392S
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 2.2A SSOT-6
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
150 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
369pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
960mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SuperSOT™-6
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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