Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET N/P-CH 30V 8SOIC
Estati Pati :
Preliminary
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A (Ta), 5.6A (Ta)
RD sou (Max) @ Id, Vgs :
23 mOhm @ 7.5A, 10V, 42 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA, 1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 4.5V, 12.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 15V, 1200pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC