Nimewo Pati :
GA50JT06-258
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
TRANS SJT 600V 100A
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
25 mOhm @ 50A
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
769W (Tc)
Operating Tanperati :
-55°C ~ 225°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-258
Pake / Ka :
TO-258-3, TO-258AA