GeneSiC Semiconductor - GA50JT06-258

KEY Part #: K6394021

GA50JT06-258 Pricing (USD) [140PC Stock]

  • 1 pcs$333.42398
  • 10 pcs$331.76515

Nimewo Pati:
GA50JT06-258
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 600V 100A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Diodes - RF, Transistors - IGBTs - Single and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA50JT06-258 electronic components. GA50JT06-258 can be shipped within 24 hours after order. If you have any demands for GA50JT06-258, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA50JT06-258 Atribi pwodwi yo

Nimewo Pati : GA50JT06-258
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 600V 100A
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 769W (Tc)
Operating Tanperati : -55°C ~ 225°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-258
Pake / Ka : TO-258-3, TO-258AA