Infineon Technologies - IRFP2907PBF

KEY Part #: K6403828

IRFP2907PBF Pricing (USD) [13671PC Stock]

  • 1 pcs$2.48114
  • 10 pcs$2.21452
  • 100 pcs$1.81595
  • 500 pcs$1.47046
  • 1,000 pcs$1.24015

Nimewo Pati:
IRFP2907PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 75V 209A TO247AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFP2907PBF electronic components. IRFP2907PBF can be shipped within 24 hours after order. If you have any demands for IRFP2907PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFP2907PBF Atribi pwodwi yo

Nimewo Pati : IRFP2907PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 75V 209A TO247AC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 209A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 125A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 620nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 13000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 470W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AC
Pake / Ka : TO-247-3

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