Vishay Siliconix - SIHH14N65EF-T1-GE3

KEY Part #: K6417501

SIHH14N65EF-T1-GE3 Pricing (USD) [32848PC Stock]

  • 1 pcs$1.26095
  • 3,000 pcs$1.25467

Nimewo Pati:
SIHH14N65EF-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CHAN 650V 15A POWERPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHH14N65EF-T1-GE3 electronic components. SIHH14N65EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH14N65EF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH14N65EF-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIHH14N65EF-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 650V 15A POWERPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 271 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 98nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1749pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 156W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 8 x 8
Pake / Ka : 8-PowerTDFN