Infineon Technologies - IRF540NPBF

KEY Part #: K6416834

IRF540NPBF Pricing (USD) [71938PC Stock]

  • 1 pcs$0.45573
  • 10 pcs$0.40221
  • 100 pcs$0.30058
  • 500 pcs$0.23310
  • 1,000 pcs$0.18403

Nimewo Pati:
IRF540NPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 33A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF540NPBF electronic components. IRF540NPBF can be shipped within 24 hours after order. If you have any demands for IRF540NPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF540NPBF Atribi pwodwi yo

Nimewo Pati : IRF540NPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 33A TO-220AB
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 33A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 44 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 71nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1960pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 130W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3