Nimewo Pati :
IXTA3N100D2
Deskripsyon :
MOSFET N-CH 1000V 3A D2PAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
5.5 Ohm @ 1.5A, 0V
Chaje Gate (Qg) (Max) @ Vgs :
37.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
1020pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB