IXYS - IXTA3N100D2

KEY Part #: K6398133

IXTA3N100D2 Pricing (USD) [23380PC Stock]

  • 1 pcs$1.93908
  • 10 pcs$1.73327
  • 100 pcs$1.42113
  • 500 pcs$1.09173
  • 1,000 pcs$0.92074

Nimewo Pati:
IXTA3N100D2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 3A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTA3N100D2 electronic components. IXTA3N100D2 can be shipped within 24 hours after order. If you have any demands for IXTA3N100D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA3N100D2 Atribi pwodwi yo

Nimewo Pati : IXTA3N100D2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 3A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 5.5 Ohm @ 1.5A, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 37.5nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1020pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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