NXP USA Inc. - BUK7880-55,135

KEY Part #: K6415288

[12461PC Stock]


    Nimewo Pati:
    BUK7880-55,135
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 55V 3.5A SOT223.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - IGBTs - Single and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BUK7880-55,135 electronic components. BUK7880-55,135 can be shipped within 24 hours after order. If you have any demands for BUK7880-55,135, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK7880-55,135 Atribi pwodwi yo

    Nimewo Pati : BUK7880-55,135
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 55V 3.5A SOT223
    Seri : Automotive, AEC-Q101, TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 80 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±16V
    Antre kapasite (Ciss) (Max) @ Vds : 500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.8W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-223
    Pake / Ka : TO-261-4, TO-261AA