Microsemi Corporation - APTM20DHM16T3G

KEY Part #: K6523411

[4174PC Stock]


    Nimewo Pati:
    APTM20DHM16T3G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 2N-CH 200V 104A SP3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTM20DHM16T3G electronic components. APTM20DHM16T3G can be shipped within 24 hours after order. If you have any demands for APTM20DHM16T3G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM20DHM16T3G Atribi pwodwi yo

    Nimewo Pati : APTM20DHM16T3G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 2N-CH 200V 104A SP3
    Seri : POWER MOS 7®
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual) Asymmetrical
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 104A
    RD sou (Max) @ Id, Vgs : 19 mOhm @ 52A, 10V
    Vgs (th) (Max) @ Id : 5V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 7220pF @ 25V
    Pouvwa - Max : 390W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : SP3
    Pake Aparèy Founisè : SP3