Nimewo Pati :
SSM6N7002BFU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 60V 0.2A US6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA
RD sou (Max) @ Id, Vgs :
2.1 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
17pF @ 25V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
US6