Toshiba Semiconductor and Storage - SSM6N7002BFU,LF

KEY Part #: K6522993

SSM6N7002BFU,LF Pricing (USD) [4313PC Stock]

  • 3,000 pcs$0.03480

Nimewo Pati:
SSM6N7002BFU,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2N-CH 60V 0.2A US6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6N7002BFU,LF electronic components. SSM6N7002BFU,LF can be shipped within 24 hours after order. If you have any demands for SSM6N7002BFU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N7002BFU,LF Atribi pwodwi yo

Nimewo Pati : SSM6N7002BFU,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2N-CH 60V 0.2A US6
Seri : -
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA
RD sou (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 3.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 17pF @ 25V
Pouvwa - Max : 300mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : US6

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