[176PC Stock]
- Nimewo Pati:
- SPB21N10 G
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 21A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - RF, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SPB21N10 G electronic components. SPB21N10 G can be shipped within 24 hours after order. If you have any demands for SPB21N10 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB21N10 G Atribi pwodwi yo
Nimewo Pati :
SPB21N10 G
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 21A D2PAK
Seri :
SIPMOS®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
80 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
4V @ 44µA
Chaje Gate (Qg) (Max) @ Vgs :
38.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
865pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
90W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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