Nimewo Pati :
RCD100N20TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 200V 10A CPT3
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5.25V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1400pF @ 25V
Disipasyon Pouvwa (Max) :
850mW (Ta), 20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
CPT3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63