IXXP12N65B4D1 Pricing (USD) [38432PC Stock]
- 1 pcs$1.01740
- Nimewo Pati:
- IXXP12N65B4D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in IXYS IXXP12N65B4D1 electronic components. IXXP12N65B4D1 can be shipped within 24 hours after order. If you have any demands for IXXP12N65B4D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXXP12N65B4D1 Atribi pwodwi yo
Nimewo Pati :
IXXP12N65B4D1
Manifakti :
IXYS
Deskripsyon :
IGBT
Seri :
XPT™, GenX4™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
38A
Kouran - Pèseptè batman (Icm) :
70A
Vce (sou) (Max) @ Vge, Ic :
1.95V @ 15V, 12A
Pouvwa - Max :
160W
Oblije chanje enèji :
440µJ (on), 220µJ (off)
Kalite Antre :
Standard
Gate chaje :
34nC
Td (on / off) @ 25 ° C :
13ns/158ns
Kondisyon egzamen an :
400V, 12A, 20 Ohm, 15V
Ranvèse Tan Reverse (trr) :
43ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220
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