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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IRFP150A

ON Semiconductor - IRFP150A

KEY Part #: K6418004

IRFP150A Pricing (USD) [48372PC Stock]

  • 1 pcs$0.91850
  • 450 pcs$0.91393
Nimewo Pati:
IRFP150A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 43A TO-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - Bipolè (BJT) - RF and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor IRFP150A electronic components. IRFP150A can be shipped within 24 hours after order. If you have any demands for IRFP150A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFP150A Atribi pwodwi yo

Nimewo Pati : IRFP150A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 43A TO-3
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 40 mOhm @ 21.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 97nC @ 10V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 2270pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 193W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3PN
Pake / Ka : TO-3P-3, SC-65-3

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