DMN61D8LVTQ-7 Pricing (USD) [458797PC Stock]
- 1 pcs$0.08062
- 3,000 pcs$0.07216
- Nimewo Pati:
- DMN61D8LVTQ-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.63A TSOT26.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN61D8LVTQ-7 electronic components. DMN61D8LVTQ-7 can be shipped within 24 hours after order. If you have any demands for DMN61D8LVTQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D8LVTQ-7 Atribi pwodwi yo
Nimewo Pati :
DMN61D8LVTQ-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 60V 0.63A TSOT26
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
630mA
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
0.74nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
12.9pF @ 12V
Pouvwa - Max :
820mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSOT-26
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