IXKP35N60C5 Pricing (USD) [12601PC Stock]
- 1 pcs$3.77983
- 50 pcs$3.76102
- Nimewo Pati:
- IXKP35N60C5
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 35A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXKP35N60C5 electronic components. IXKP35N60C5 can be shipped within 24 hours after order. If you have any demands for IXKP35N60C5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKP35N60C5 Atribi pwodwi yo
Nimewo Pati :
IXKP35N60C5
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 35A TO-220AB
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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