[4157PC Stock]
- Nimewo Pati:
- SI5513DC-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 3.1A 1206-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5513DC-T1-GE3 electronic components. SI5513DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5513DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5513DC-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5513DC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 3.1A 1206-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A, 2.1A
RD sou (Max) @ Id, Vgs :
75 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
1206-8 ChipFET™
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