CSD13383F4T Pricing (USD) [466207PC Stock]
- 1 pcs$0.07934
- 250 pcs$0.07277
- 1,250 pcs$0.03765
- Nimewo Pati:
- CSD13383F4T
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 12V 3PICOSTAR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD13383F4T electronic components. CSD13383F4T can be shipped within 24 hours after order. If you have any demands for CSD13383F4T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13383F4T Atribi pwodwi yo
Nimewo Pati :
CSD13383F4T
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 12V 3PICOSTAR
Seri :
FemtoFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
44 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.6nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
291pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PICOSTAR
Pake / Ka :
3-XFDFN
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