Deskripsyon :
GAN TRANS 2N-CH 60V BUMPED DIE
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A, 38A
RD sou (Max) @ Id, Vgs :
11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
2.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 30V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die