DMN2058U-7 Pricing (USD) [953326PC Stock]
- 1 pcs$0.03880
- 3,000 pcs$0.03524
- Nimewo Pati:
- DMN2058U-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 4.6A SOT23-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2058U-7 electronic components. DMN2058U-7 can be shipped within 24 hours after order. If you have any demands for DMN2058U-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2058U-7 Atribi pwodwi yo
Nimewo Pati :
DMN2058U-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 4.6A SOT23-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 10V
RD sou (Max) @ Id, Vgs :
35 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
281pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.13W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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