SCT3030ALGC11 Pricing (USD) [3652PC Stock]
- 1 pcs$11.45278
- Nimewo Pati:
- SCT3030ALGC11
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET NCH 650V 70A TO247N.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SCT3030ALGC11 electronic components. SCT3030ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3030ALGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT3030ALGC11 Atribi pwodwi yo
Nimewo Pati :
SCT3030ALGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET NCH 650V 70A TO247N
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
39 mOhm @ 27A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 13.3mA
Chaje Gate (Qg) (Max) @ Vgs :
104nC @ 18V
Vgs (Max) :
+22V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
1526pF @ 500V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
262W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N
Pake / Ka :
TO-247-3
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