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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. GA05JT01-46

GeneSiC Semiconductor - GA05JT01-46

KEY Part #: K6397796

GA05JT01-46 Pricing (USD) [1662PC Stock]

  • 1 pcs$28.37712
  • 10 pcs$26.70832
  • 25 pcs$25.03877
Nimewo Pati:
GA05JT01-46
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 100V 9A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA05JT01-46 electronic components. GA05JT01-46 can be shipped within 24 hours after order. If you have any demands for GA05JT01-46, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA05JT01-46 Atribi pwodwi yo

Nimewo Pati : GA05JT01-46
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 100V 9A
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 240 mOhm @ 5A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 20W (Tc)
Operating Tanperati : -55°C ~ 225°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-46
Pake / Ka : TO-46-3
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