BSC097N06NSTATMA1 Pricing (USD) [238787PC Stock]
- 1 pcs$0.15490
- Nimewo Pati:
- BSC097N06NSTATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIFFERENTIATED MOSFETS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC097N06NSTATMA1 electronic components. BSC097N06NSTATMA1 can be shipped within 24 hours after order. If you have any demands for BSC097N06NSTATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC097N06NSTATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC097N06NSTATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIFFERENTIATED MOSFETS
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Ta), 48A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
9.7 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
3.3V @ 14µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1075pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Ta), 43W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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