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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT25M100J

Microsemi Corporation - APT25M100J

KEY Part #: K6392601

APT25M100J Pricing (USD) [2855PC Stock]

  • 1 pcs$15.16844
  • 10 pcs$14.03150
  • 25 pcs$12.89401
  • 100 pcs$11.98381
  • 250 pcs$10.99780
Nimewo Pati:
APT25M100J
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1000V 25A SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT25M100J electronic components. APT25M100J can be shipped within 24 hours after order. If you have any demands for APT25M100J, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT25M100J Atribi pwodwi yo

Nimewo Pati : APT25M100J
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1000V 25A SOT-227
Seri : POWER MOS 8™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 330 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 305nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 9835pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 545W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : ISOTOP®
Pake / Ka : SOT-227-4, miniBLOC

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