SSM3K376R,LF Pricing (USD) [1230545PC Stock]
- 1 pcs$0.03006
- Nimewo Pati:
- SSM3K376R,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- SMALL LOW RON NCH MOSFETS ID 4A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3K376R,LF electronic components. SSM3K376R,LF can be shipped within 24 hours after order. If you have any demands for SSM3K376R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K376R,LF Atribi pwodwi yo
Nimewo Pati :
SSM3K376R,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
SMALL LOW RON NCH MOSFETS ID 4A
Seri :
U-MOSVII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
56 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 4.5V
Vgs (Max) :
+12V, -8V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23F
Pake / Ka :
SOT-23-3 Flat Leads
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