[13603PC Stock]
- Nimewo Pati:
- IRC644PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 250V 14A TO-220-5.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRC644PBF electronic components. IRC644PBF can be shipped within 24 hours after order. If you have any demands for IRC644PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRC644PBF Atribi pwodwi yo
Nimewo Pati :
IRC644PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 250V 14A TO-220-5
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
280 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1200pF @ 25V
Karakteristik FET :
Current Sensing
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-5
Pake / Ka :
TO-220-5
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