Vishay Siliconix - SIE874DF-T1-GE3

KEY Part #: K6418788

SIE874DF-T1-GE3 Pricing (USD) [77749PC Stock]

  • 1 pcs$0.50543
  • 3,000 pcs$0.50291

Nimewo Pati:
SIE874DF-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 20V 60A POLARPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIE874DF-T1-GE3 electronic components. SIE874DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE874DF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIE874DF-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIE874DF-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 20V 60A POLARPAK
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.17 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 145nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6200pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5.2W (Ta), 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 10-PolarPAK® (L)
Pake / Ka : 10-PolarPAK® (L)