IXYS - MMIX1F40N110P

KEY Part #: K6395627

MMIX1F40N110P Pricing (USD) [2283PC Stock]

  • 1 pcs$20.97323
  • 20 pcs$20.86889

Nimewo Pati:
MMIX1F40N110P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1100V 24A SMPD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in IXYS MMIX1F40N110P electronic components. MMIX1F40N110P can be shipped within 24 hours after order. If you have any demands for MMIX1F40N110P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1F40N110P Atribi pwodwi yo

Nimewo Pati : MMIX1F40N110P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1100V 24A SMPD
Seri : HiPerFET™, PolarP2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 290 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 310nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 19000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 24-SMPD
Pake / Ka : 24-PowerSMD, 21 Leads